Samsung Electronics has already started production of its 4Gb LPDDR3 mobile DRAM aimed at top-tier smartphones and tablets.
This new memory technology is the industry’s first ultra-high-speed four gigabit low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced using a 20-nanometer class process. This process makes the device smaller which allows OEMs to use a 2GB package that includes four of Samsung’s new chips in a single package that is just 0.8mm in size. Note: 4 Gigabits = 512 Megabytes. 2GB package = 512MB chips (x4)
The 20nm-class 4Gb LPDDR3 can transmit data of up to 2,133 Mbps per pin, which is more than double the performance of the standard 800Mbps mobile DRAM (LPDDR2). In comparison to the 30nm-class LPDDR3 DRAM, the new technology is 30% more powerful but consumes 20% less power.
“By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics.
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